2
RF Device Data
Freescale Semiconductor
MRF7S35015HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=32Vdc,VGS
=0Vdc)
IDSS
?
?
2
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 33.5
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
=32Vdc,ID
= 50 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.5
3.3
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
= 300 mAdc)
VDS(on)
0.1
1.7
0.3
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=32Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
0.12
?
pF
Output Capacitance
(VDS
=32Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
92
?
pF
Input Capacitance
(VDS
=32Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
46
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) VDD
=32Vdc,IDQ
=50mA,Pout
= 15 W Peak (3 W Avg.), f = 3100 MHz and
f = 3500 MHz, Pulsed, 100
μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Power Gain
Gps
13
16
19
dB
Drain Efficiency
ηD
38
41
?
%
Input Return Loss
IRL
?
-- 1 2
-- 7
dB
Pulsed RF Performance
(In Freescale Application Test Fixture, 50 ohm system) VDD
=32Vdc,IDQ
=50mA,Pout
= 15 W Peak (3 W Avg.),
f = 3100 MHz and f = 3500 MHz, Pulsed, 100
μsec Pulse Width, 20% Duty Cycle, 25 ns Input Rise Time
Output Pulse Droop
(500
μsec Pulse Width, 10% Duty Cycle)
DRPout
?
0.2
?
dB
Load Mismatch Tolerance
(VSWR = 10:1 at all Phase Angles)
VSWR--T
No Degradation in Output Power
1. Part internally matched both on input and output.
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